Abstract—Here, the optoelectronic performance of lattice
matched InGaAs/InP vertical cavity surface emitting LASER is
numerically simulated using MATLAB in (100), (110), (111),
(113) and (131) crystal orientation by solving an eight-band k.p
Hamiltonian using finite difference scheme including spin-orbit
coupling. Tensor plane rotation formulae is applied to change the
wave-vector k and Hamiltonian from orthodox (100) plane
orientation. It is shown that there is a notable interrelationship
between optical emission spectra and crystal plane orientations.
The highest and lowest gains are estimated in (111) and (100)
orientations with their respective peak emission wavelengths of
1770nm and 1680 nm at the carrier injection density of 2.5 × 1018
cm-3. The outcome of this paper would be a stimulus to design
ultra-speed optoelectronic devices with performance amelioration
by using non-100 oriented epitaxial layers.
6 freelancers estão ofertando em média ₹9519 nesse trabalho
The project sounds extremely intresting. Personally, I possess a strong background in Matlab simulation applied to laser physics, and I can optimize the code structure in order to obtain the best result possibile.