Optoelectronic Performance of Vertical Cavity Surface Emitting InGaAs/InP QW Laser in non-conventional orientation

Abstract—Here, the optoelectronic performance of lattice

matched InGaAs/InP vertical cavity surface emitting LASER is

numerically simulated using MATLAB in (100), (110), (111),

(113) and (131) crystal orientation by solving an eight-band k.p

Hamiltonian using finite difference scheme including spin-orbit

coupling. Tensor plane rotation formulae is applied to change the

wave-vector k and Hamiltonian from orthodox (100) plane

orientation. It is shown that there is a notable interrelationship

between optical emission spectra and crystal plane orientations.

The highest and lowest gains are estimated in (111) and (100)

orientations with their respective peak emission wavelengths of

1770nm and 1680 nm at the carrier injection density of 2.5 × 1018

cm-3. The outcome of this paper would be a stimulus to design

ultra-speed optoelectronic devices with performance amelioration

by using non-100 oriented epitaxial layers.

Habilidades: Física, Engenharia Elétrica, MATLAB

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ID do Projeto: #31444078